RADISYS 067-02121-0005數字量輸入卡件

1.產 品 資 料 介 紹：

中文資料：

RADISYS 067-02121-0005橋接寄存器的字節序很少。DMA控制寄存器用于操作DMA引擎。這些寄存器位于離基偏移$0的位置。使用開關S7、S4和S3來確定基本地址。

反射式內存（RFM）控制和狀態寄存器–RFM控制和狀態注冊表實現RADISYS 067-02121-0005反射式內存板特有的功能。這些功能包括RFM操作狀態、VME總線中斷的RFM源的詳細控制以及網絡中斷訪問。這些寄存器的位置與基準偏移1200美元。使用開關S7、S4和S3來確定基本地址。

RADISYS 067-02121-0005反射內存RAM實際板載反射內存SDRAM有兩種尺寸：64兆字節或128兆字節奇偶校驗。SDRAM在由開關S8指定的位置開始。與以前版本的VMIC反射內存產品不同，RFM控制和狀態寄存器不會取代RAM的前40美元位置。

英文資料：

The VMEbus bridge registers have little-endian byte-ordering. The DMA Control Registers are used to operate the DMA engine. These registers are located at $0 offset from base. The base address is determined using switches S7, S4 and S3.RADISYS 067-02121-0005

Reflective Memory (RFM) Control and Status Registers – The RFM Control and Status Registers implement the functions unique to the RADISYS 067-02121-0005 Reflective Memory board. These functions include RFM operation status, detailed control of the RFM sources for the VMEbus interrupt, and network interrupt access. These registers are located at $1200 offset from base. The base address is determined using switches S7, S4 and S3.RADISYS 067-02121-0005

Reflective Memory RAM The actual on-board Reflective Memory SDRAM is available in two sizes: 64 Mbytes or 128 Mbytes with parity. The SDRAM starts at the location specified by switch S8. Unlike the previous versions of VMIC’s Reflective Memory products, the RFM Control and Status Registers do NOT replace the first $40 locations of RAM.RADISYS 067-02121-0005

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