RH924UQ模擬量編程模塊
基座電壓的振幅由集電極決定第二級(jí)差動(dòng)放大器電流? 電流變晶體管Q3齊納二極管Z2用作電壓鉗位，電阻器R31和R32為分壓器，用于確定可編程單結(jié)晶體管Q5。PUT Q5的輸出施加到柵極通過(guò)電阻器R43和R44以及DIDOE的功率控制器SCRD15和D16以及放大級(jí)，二極管D10、電阻器R46和R81以及電容器C24。
功率級(jí)（功率控制器）：功率級(jí)為發(fā)電機(jī)供電激勵(lì)器? eld電流。功率級(jí)由SCR/二極管電橋組成直腸? 呃。功率級(jí)輸入為單相120 Vac或單相相位240 Vac，取決于調(diào)節(jié)器設(shè)計(jì)。功率輸出級(jí)由其SCR接收的導(dǎo)通選通信號(hào)調(diào)節(jié)來(lái)自相位控制電路。該電路包括一個(gè)續(xù)流二極管對(duì)于? 感應(yīng)勵(lì)磁機(jī)的eld放電? eld負(fù)載和its中的保險(xiǎn)絲（Fl）輸入電源線。領(lǐng)域? 灰化電路? 埃爾德? 灰化電路包括SCR1，? 埃爾德效應(yīng)晶體管（FET）Q6、晶體管Q7至Q10、電阻器R34通過(guò)R42、R82和R85
二極管D7、D11和D29以及電容器
晶體管Q8和Q9、二極管D7以及電阻器R36、R37和R36，R38、R40和R41包括施密特觸發(fā)電路。施密特
當(dāng)電壓增加時(shí)，觸發(fā)器開(kāi)啟，且幅度傳感標(biāo)稱(chēng)24 Vdc輸出的大約70%
直腸? ers，并在電壓降低時(shí)關(guān)閉大約為傳感標(biāo)稱(chēng)輸出的30%直腸? 呃。
當(dāng)施密特觸發(fā)器斷開(kāi)時(shí)，F(xiàn)ET Q6接通。此動(dòng)作接通在晶體管Q10和Q7上? 重從SCR1位于電路板上。從SCR1? 可控硅直腸? 調(diào)節(jié)器功率控制器電路中的ers SCR1和SCR2
當(dāng)接通時(shí)，向勵(lì)磁機(jī)提供電流? 埃爾德。當(dāng)施密特觸發(fā)器接通，F(xiàn)ET Q6關(guān)斷。此動(dòng)作關(guān)斷晶體管Q10
Q6和Q7，其去除到從SCR1的選通信號(hào)的選通信號(hào)? 來(lái)自功率控制器SCR的灰化電路。
電阻器R70和電容器C19在? 環(huán)功率級(jí)SCR。電容器C8和電阻器R45有助于限制傳導(dǎo)EMI。二極管D8、D9和功率級(jí)電源中的二極管權(quán)力? 灰化和相位控制電路。
The amplitude of the pedestal voltage is determined by the collector current of second stage differential ampli? er transistor Q3. Zener diode Z2 serves as a voltage clamp and resistors R31 and R32 are a voltage divider, which determines the threshold of the programmable unijunction transistor Q5. The output of PUT Q5 is applied to the gate of the power controller SCRs through resistors R43 & R44 and didoes D15 & D16 and an amplifying stage that is comprised of transistor Q11, diode D10, resistors R46 & R81, and capacitor C24. Power stage (power controller): The power stage supplies the generator exciter ? eld current. The power stage consists of an SCR/diode bridge recti? er. The power stage input is either single phase 120 Vac or single phase 240 Vac depending on regulator design. The output of the power stage is regulated by the turn on gating signal that its SCRs receive from the phase control circuit. The circuit includes a free wheeling diode for ? eld discharge of the inductive exciter ? eld load and a fuse (Fl) in its input power line. Field ? ashing circuit: The ? eld ? ashing circuit includes SCR1, ? eld effect transistor (FET) Q6, transistors Q7 through Q10, resistors R34 through R42, R82, and R85, Diodes D7, D11, & D29, and capacitors C25 & C27. Transistors Q8 and Q9, diode D7, and resistors R36, R37, R38, R40, & R41 comprise a Schmidt trigger circuit. The Schmidt trigger turns on when an increasing voltage is present with magnitude approximately 70% of the nominal 24 Vdc output of the sensing recti? ers, and turns off when a decreasing voltage is present with magnitude of approximately 30% of the nominal output of the sensing recti? er. When the Schmidt trigger is off, FET Q6 is on. This action turns on transistors Q10 and Q7, which supply current to ? re slave SCR1 located on the circuit board. Slave SCR1 ? res the silicon controlled recti? ers SCR1 and SCR2 in the regulator power controller circuit which, when on, supply current to the exciter ? eld. When the Schmidt trigger turns on, FET Q6 turns off. This action turns off transistors Q10 and Q7, which removes the gating signal to slave SCR1 and in turn the gating signal of the ? ashing circuit from the power controller SCRs. Resistor R70 and capacitor C19 provide assistance in the ? ring of the power stage SCRs. Capacitor C8 and resistor R45 assist in limiting conducted EMI. Diodes D8, D9 and those in the power stage supply power to the ? ashing and phase control circuits.
